Electron beam devices with semiconductor ultraviolet light source

ABSTRACT

An electron beam source includes a photocathode or an anode attached to an ultraviolet semiconductor light source (SULS), or an anode incorporated between a SULS and a photocathode, and an electron beam gun using the electron beam source and electron beam pumped target. In certain embodiments the target is an electron beam pumped light emitting device. The photocathode surface is essentially parallel to the surface of the SULS which is a Light Emitting Diode, Superluminescent Diode, or Laser Diode. Different embodiments of the present disclosure include a photocathode directly attached to the SULS surface or having an intermediate transition layer or layers between the photocathode and the emitter. The transition layer includes a substrate on which the SULS is fabricated and/or a layer to facilitate light extraction from the SULS to the photocathode. The active region of the electron beam pumped light emitter is placed in the path of photoelectron flow to excite non-equilibrium electron-hole pairs and generate light emission at a wavelength or wavelengths determined by the energy band structure of the active region.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims benefit to U.S. Provisional Patent Application No. 63/148,227, filed Feb. 11, 2021, which is incorporated by reference herein in its entirety.

TECHNICAL FIELD

The present disclosure relates generally to electron devices and more particularly to free electron beam pumped and controlled semiconductor light emitting devices and electronic devices.

BACKGROUND

Electron-beam technology has provided the basis for a variety of novel and specialized applications in semiconductor manufacturing, vacuum tube devices, microelectromechanical systems, nanoelectromechanical systems, and microscopy.

Free electrons generated in a vacuum can be manipulated by electric and magnetic fields to form a fine beam. Where the beam collides with solid-state matter, electrons are converted into heat or kinetic energy. This concentration of energy in a small volume of matter can be precisely controlled electronically, which brings many advantages.

Free electrons are generated using heated cathodes, high-voltage cold cathodes, and photocathodes. Photocathode technology is based on a photoelectric effect when an electron within some material absorbs the energy of a photon and acquires more energy than its binding energy and is able to leave the material. Examples of existing devices are shown in FIG. 1, FIG. 2 and FIG. 3. In FIG. 1, a laser beam irradiates a photocathode material with a photon energy sufficient to generate photoelectrons, some of which pass through an extraction pinhole and a grounded RF pillbox-cavity, and then through a target pinhole and into the targeted item. In FIG. 2 and FIG. 3, a photocathode material is irradiated by ultraviolet Light Emitting Diodes (UV LEDs) with a photon energy sufficient to generate photoelectrons from the photocathode front (FIG. 2) and back (FIG. 3) sides. Generated photoelectrons are controlled by voltage applied between anode and cathode forming electron beam. Properties of the electron beam are manipulated using additional electrodes placed in between cathode and anode.

SUMMARY

A free electron beam source and electron beam (E-beam) devices with embodiments of the present disclosure may include a semiconductor ultraviolet light source (SULS), a photocathode layer attached directly to a SULS or a transition layer attached to the SULS and an anode separated from the photocathode by a vacuum gap. A photocathode layer may be at least partially transparent to the light provided by the SULS and photoelectrons are generated at the surface of the photocathode layer facing the anode. A photocathode may be a continuous layer, a patterned layer, a set of discs, quantum discs, quantum wires, or quantum dots. A SULS may be vertically or edge emitting UV LEDs, UV Superluminescent Diodes (SLEDs), or UV Laser Diodes (LDs). The device may include one or more control electrodes placed in between the photocathode and anode to manipulate free electron beam.

A transition layer between SULS and photocathode may be a substrate material on which a SULS device structure is deposited and fabricated. Such substrate material may be at least partially optically transparent to the light emitted by the SULS. For a SULS fabricated using III-Nitride semiconductors (GaN, AlN, InN, BN) and their alloys (AlGaN, AlInGaN, InGaN, BInN, BGaN, BAlN, BAlGaN, BAlGaInN), suitable substrate materials include Sapphire, AlN, AlON.

In another embodiment, a transition layer between a SULS and a photocathode may include a light extraction layer to facilitate light extraction from the SULS and to enhance irradiation of a photocathode. Such layer may be a refraction index matching layer, a Bragg reflector, a layer with periodically modulated refraction index, a nonlinear optical crystal, an optical waveguide, or combination of at least some of such items.

In yet another embodiment, a photocathode layer may be attached directly to the edge of a SULS or a transition layer attached to the edge of the SULS. This embodiment may be particularly advantageous to an edge emitting SULS.

A free electron beam generated and manipulated by the device may be used to irradiate a target material placed between a photocathode and an anode. In one embodiment, such target material is a light emitting device. Free electrons absorbed inside the target light emitting device may generate non-equilibrium electron-hole pairs, which recombine and emit light determined by the energy band structure of the target device.

In another embodiment, an electron beam may pass through an opening in the anode electrode. The target device or material may be placed in the path of the electron beam.

Advantageously, certain teachings of the present disclosure may substantially reduce the size of electron beam devices and enable microscopic scale integration of hybrid semiconductor and vacuum tube device technologies. Electron beam pumping of light emitting device structures may allow generation of light without electrical injection in small footprint systems. It may also allow fabrication of a SULS with a peak emission wavelength shorter than the emission from the SULS that is used to generate photoelectrons.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic illustration of an electron beam device with a photocathode irradiated with a laser beam.

FIG. 2 is a schematic illustration of an electron beam device with a photocathode irradiated using an ultraviolet Light Emitting Diode (UV LED) from the front side of the photocathode.

FIG. 3 is a schematic illustration of an electron beam device with a photocathode irradiated using an UV LED from the back side of the photocathode.

FIG. 4 is a schematic illustration of an electron beam device with a partially transparent photocathode layer attached to a semiconductor ultraviolet light source (SULS).

FIG. 5 is a schematic illustration of an electron beam device with a partially transparent photocathode layer as in FIG. 4 attached to the surface of a transition layer incorporated between a photocathode and a SULS.

FIG. 6 is a schematic illustration of an electron beam device with a partially transparent photocathode layer attached to a semiconductor ultraviolet light source (SULS) in the areas where a transition layer is removed.

FIG. 7 is a schematic illustration of an electron beam device with an anode terminal consisting of an anode electrode and an anode having a smaller surface area than the anode electrode area and connected to the anode electrode.

FIGS. 8A-8C are schematic Illustrations of three different embodiments of an anode having a smaller area than the area of a SULS.

FIG. 9 is a schematic illustration of an electron beam device with a partially transparent photocathode layer attached to a SULS and one control electrode incorporated between the photocathode and the anode.

FIG. 10 is a schematic illustration of an electron beam device with a partially transparent photocathode layer attached to a SULS and an anode terminal having a grid plate.

FIG. 11 is a schematic illustration of an electron beam device with a partially transparent photocathode layer attached to a SULS and a target for electron beam irradiation incorporated between a photocathode and an anode terminal.

FIG. 12 is a schematic illustration of an electron beam device with a partially transparent photocathode layer attached to a SULS and a target for electron beam irradiation incorporated between a photocathode and an anode.

FIG. 13 is a schematic illustration of an electron beam device with a partially transparent photocathode layer attached to a SULS and a target irradiated with an electron beam through a grid plate.

FIG. 14 is a schematic illustration of a partially transparent photocathode attached to a transition layer incorporated between a photocathode and an edge emitting SULS.

FIG. 15 is a schematic illustration of a partially transparent photocathode attached to an edge of an edge emitting SULS.

FIG. 16 is a schematic illustration of a patterned photocathode.

FIG. 17 is a schematic illustration of an electron beam device with an anode attached to a SULS and one control electrode incorporated between a photocathode and an anode.

FIG. 18 is a schematic illustration of an electron beam device with an anode incorporated between a photocathode and a SULS and one control electrode incorporated between a photocathode and an anode.

DETAILED DESCRIPTION

In accordance with embodiments of the present disclosure, a free electron beam may be generated using a SULS having a photon energy sufficient to cause a photoelectric effect in photocathode material. In one embodiment, the SULS are devices having at least one quantum well, quantum wire, quantum dot, or combination of at least some of the above in the active region and fabricated using III-Nitride semiconductors (GaN, AlN, InN, BN) and their alloys (AlGaN, AlInGaN, InGaN, BInN, BGaN, BAlN, BAlGaN, BAlGaInN). Referring to FIG. 4, a SULS 1 is attached to the surface of a partially transparent photocathode layer 2. SULS 1 is a vertically emitting or edge emitting device, or a combination of both. SULS 1 is a single wavelength or multi-wavelength light emitting device. SULS 1 is a single light emitting device or light emitting device array. A photocathode 2 is a single layer or a multi-layer element comprising different materials with different free electron energies, or a layer with a graded material composition. Ultraviolet light emitted by SULS 1 penetrates photocathode 2 and generates free photoelectrons at the surface of the photocathode opposite to the SULS surface inside a vacuum gap 5 between the photocathode and anode electrode 6. For example, in order to excite a photoelectric effect at the surface of an Au photocathode using ultraviolet light with a photon energy in excess of 4.5 eV, the thickness of the Au photocathode will be less than approximately 20 nm. Photocathode electrode 3 is attached to photocathode layer 2 to supply electrical bias to the photocathode layer and reduce current spreading. Photocathode layer 2 and photocathode electrode 3 are separated from anode electrode 6 by a vacuum gap 5 via a separation layer 4. Separation layer 4 is a dielectric or a material having a low electrical conductivity sufficient for electrical separation of photocathode electrode 3 and anode terminal 6. A flow of free electrons from photocathode 2 to anode 6 is controlled by electrical bias applied between the photocathode and the anode.

Referring to FIG. 5, a photocathode layer 2 is attached to the surface of a transition layer 7, incorporated between the photocathode 2 and SULS 1. Transition layer 7 is a single layer such as a substrate on which SULS 1 is fabricated, or a light extraction layer or layers in order to facilitate light extraction from the SULS and enhance illumination of photocathode layer 2, or a combination of both. For example, for III-Nitride SULS substrates are made of Sapphire, Aluminum Nitride (AlN), Aluminum Oxynitride (AlON) or other similar materials that transmit ultraviolet light. Light extraction layers are layers having refraction index matching layer, a Bragg reflector, a layer with periodically modulated refraction index, a nonlinear optical crystal, an optical waveguide, or a combination of at least some of the above.

Referring to FIG. 6, a transition layer 7 is partially or completely removed in certain areas and a partially transparent photocathode layer 8 is deposited in the areas, whereas photocathode electrode 3 is deposited on the walls of the areas.

Referring to FIG. 7, in this embodiment an anode terminal includes anode electrode 10 and anode 9 having a smaller surface area than the area of the anode electrode and having an anode tip positioned closer to the photocathode 2. Anode 9 is designed to manipulate the density and/or shape of the electron beam. In one embodiment the shape and position of anode 9 is designed to significantly increase electron beam density close to the anode tip. In one embodiment anode 9 is connected to anode electrode 10 having spread over top of the anode and/or having connections to an anode electrode and having a separation layer 4 as in FIG. 7.

Referring to FIGS. 8A-8C, anode connection 12 to the anode electrode is fabricated over a part of SULS 11 (FIG. 8A), a connection 13 over the entire SULS (FIG. 8B), or a patterned connection 14 (FIG. 8C). In another embodiment, the device has more than one anode or an array of anodes.

In another embodiment, referring to FIG. 9, an electron beam essentially similar to that of FIGS. 4-7 has a controlling electrode 15 between photocathode 2 and anode terminal 6 (FIGS. 4-6) or anode 9 (FIG. 7). Controlling electrode 15 controls photoelectron flow between the photocathode and the anode. In yet another embodiment there is more than one controlling electrode. Spacing between controlling electrodes, spacing between controlling electrodes and the photocathode, spacing between controlling electrodes and the anode, and the shape of controlling electrodes are designed to optimize desired characteristics of photoelectron flow between the photocathode and the anode.

Referring to FIG. 10, an electron beam device is essentially similar to that of FIGS. 4-7 has an anode terminal having an opening with a grid plate 16. An electron beam can pass through the opening with the grid plate. The grid plate can be biased and used as a controlling electrode.

Referring to FIGS. 11-12, a free electron beam generated and manipulated by the device in embodiments of FIGS. 4-10 is used to irradiate target material placed in between a photocathode and an anode, or attached to an anode. Referring to FIG. 13, the target material is placed within the electron beam after passing through the grid plate 16. In one embodiment such target material is a light emitting device. Free electrons absorbed inside the target generate non-equilibrium electron-hole pairs, which recombine and emit light determined by the energy band structure of the target device. In this embodiment non-equilibrium electron-hole pairs are generated inside the target without electrical current injection or simultaneously with current injection. An emission wavelength of the target light emitting device can be shorter or longer than the wavelength of a SULS which generates photoelectrons at the surface of a photocathode. Emission from the irradiated target light emitting device structure can be a spontaneous or stimulated emission. The light emitting device structure can be designed as a vertical emitting device structure or a lateral emission structure. The target device can be another type of electron device incorporated close to the anode or attached to the anode.

Referring to FIG. 14, a partially transparent photocathode layer 2 is attached to a light extraction layer 21 to facilitate light extraction from an edge emitting SULS 20.

In another embodiment referring to FIG. 15, a partially transparent photocathode layer 23 is attached to the edge of an edge emitting SULS 22. A transition layer, a light extraction layer, and/or a mirror can be attached to the edge of the SULS.

In yet another embodiment referring to FIG. 16, a photoelectron generating structure has a patterned photocathode electrode 26 and/or non-continuous partially transparent photocathode layer 27.

Referring to FIG. 17, a photoelectron beam is generated, including a SULS 1, an anode 32 attached directly to SULS 1, attached to a transition layer 7, incorporated between the SULS and the anode, or embedded in the transition layer 7. Photocathode terminal 31 is separated from anode 32 and anode electrode 28 by a vacuum gap 30 via a separation layer 29, which is a dielectric of having a low electrical conductivity. The area of anode 32 is smaller than the area of SULS 1, so that the light emitted by the SULS can irradiate photocathode terminal 31 and generate photoelectrons. A photoelectron beam is controlled by a voltage applied between the anode electrode 28 and photocathode terminal 31. The electron beam can be manipulated by a controlling electrode 33 incorporated between photocathode terminal 31 and anode 32.

Referring to FIG. 18, in another embodiment anode 34 is incorporated between a SULS 1 and a photocathode terminal 31. The area of anode 34 is smaller than the area of SULS 1, so that the light emitted by the SULS can irradiate photocathode terminal 31 and generate photoelectrons. The photoelectron beam is controlled by a voltage applied between anode 34 and photocathode terminal 31. The photoelectron beam can be manipulated by a controlling electrode 35 incorporated between photocathode terminal 31 and anode 34. 

1. A device comprising: a semiconductor light source; a photocathode attached to the semiconductor light source; a cathode electrode attached to the photocathode; and an anode terminal separated from the photocathode by a vacuum gap; wherein the semiconductor light source generates photoelectrons at a surface of the photocathode.
 2. A device comprising: a semiconductor light source for emitting light; a transition layer at least partially transparent to the light of the semiconductor light source and attached to the semiconductor light source; a photocathode attached to the transition layer; a cathode electrode attached to the photocathode; and an anode terminal separated from the photocathode by a vacuum gap; wherein the semiconductor light source generates photoelectrons at a surface of the photocathode.
 3. A device comprising: a semiconductor light source; an anode terminal including an anode and an anode electrode; the anode being attached to the semiconductor light source; the anode electrode being attached to the anode; and a photocathode separated from the anode by a vacuum gap; wherein the semiconductor light source generates photoelectrons at a surface of the photocathode.
 4. A device comprising: a semiconductor light source for emitting light; a transition layer at least partially transparent to the light of the semiconductor light source and attached to the semiconductor light source; an anode terminal including an anode and an anode electrode; the anode being attached to the transition layer; the anode electrode being attached to the anode; and a photocathode separated from the anode by a vacuum gap; wherein the semiconductor light source generates photoelectrons at a surface of the photocathode.
 5. A device comprising: a semiconductor light source; a photocathode; an anode terminal including an anode; and the anode being incorporated between the semiconductor light source and the photocathode and separated from the semiconductor light source and from the photocathode by vacuum gaps; wherein the semiconductor light source generates photoelectrons at a surface of the photocathode.
 6. The device according to claim 1, wherein the semiconductor light source is one of a semiconductor ultraviolet Light Emitting Diode (UV LED), a semiconductor ultraviolet Superluminescent Light Emitting Diode (UV SLED), or a semiconductor ultraviolet Laser Diode (UV LD). 7-9. (canceled)
 10. The device according to claim 1, wherein the semiconductor light source is one of a vertical emission device or an edge emission device, and is one of a single emission wavelength device or a multiple emission wavelengths device. 11-13. (canceled)
 14. The device according to claim 1, wherein the photocathode is a layer at least one of at least partially transparent to the light emitted by the semiconductor light source or having a thickness optimal for photoelectron generation at a photocathode layer surface facing the anode.
 15. The device according to claim 14, wherein the photocathode is a layer of Au.
 16. The device according to claim 1, wherein the photocathode one of includes more than one layer of different materials, each different material having a different electron binding energy, is a layer having a graded materials composition, includes at least one piece of photocathode material with at least one surface opening facing the semiconductor light source and at least one opening facing the anode, is a patterned layer including at least one of quantum wells, quantum wires, quantum dots as a photocathode material, or is attached to an edge of the semiconductor light source. 17-20. (canceled)
 21. The device according to claim 2, wherein the transition layer one of is a substrate on which the semiconductor light source is fabricated and is at least partially transparent to the light emitted by the semiconductor light source, is a light extraction layer from the semiconductor light source is a combination of a substrate on which the semiconductor light source is fabricated and is at least partially transparent to the light emitted by the semiconductor light source and a light extraction layer from the semiconductor light source, or is a patterned transition layer of one of claims 21-24, with parts of the transition layer partially or completely removed. 22-25. (canceled)
 26. The device according to claim 1, wherein one of the anode has a surface area smaller than a surface area of the anode electrode of the anode terminal, the anode terminal defines a spacing between the anode and the semiconductor light source smaller than a spacing between the anode electrode and the semiconductor light source, the anode electrode has one of a dielectric layer or a low electric conductivity layer on a surface facing the photocathode, and the anode terminal includes a patterned anode. 27-29. (canceled)
 30. The device according to claim 1, wherein the device includes a plurality of the anode terminals.
 31. The device according to claim 1, wherein an opening is defined in the anode electrode of the anode terminal.
 32. The device according to claim 31, further including a grid plate located in the opening defined in the anode electrode.
 33. The device according to claim 3, wherein the anode is embedded in one of the semiconductor light source or a transient layer.
 34. The device according to claim 1, further including one of one or more control electrodes between the anode and the photocathode to control photoelectron flow from the photocathode to the anode, or a separation layer between the anode and the photocathode, the separation layer including a dielectric layer or a low electrical conductivity layer.
 35. (canceled)
 36. The device according to claim 36, further including an optically reflecting layer attached to a surface of the separation layer.
 37. The device according to claim 1, wherein the photocathode includes a plurality of the photocathodes.
 38. The device according to claim 1, wherein a voltage is applied to at least one of the anode, the photocathode, and the one or more control electrodes, wherein the voltage is one of a constant bias voltage or a pulsed bias voltage, and wherein a polarity, amplitude, pulse shape, duration, and repetition rate of the voltage is controlled by an outside electric circuit.
 39. The device according to claim 1, wherein one of electron beam pumped light emitting devices are incorporated one of between the anode and the photocathode or attached to the anode, or hybrid electron beam pumped and current injection light emitting devices are incorporated one of between the anode and the photocathode or attached to the anode. 40-41. (canceled) 